Resistive Switching Memory Based on Thin-Film Design of Amorphous Hafnium Oxide (Cambridge & Others)
A technical paper titled “Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity” was published by researchers at University of Cambridge ...
A new technical paper titled “Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes” was published by researchers at RWTH Aachen ...
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