A joint research team has reported for the first time that the resistive switching behavior of ion-motion-mediated volatile memristors, which are emerging as promising next-generation semiconductor ...

A recent study published in Small investigates the mechanisms of resistive switching in monolayer hexagonal boron nitride (hBN) memristive devices using a fully optical, operando approach. Image ...

A new neuromorphic device controls hydrogen ions to mimic synaptic learning and memory, achieved for the first time in a vertical two-terminal architecture.

(Nanowerk News) Conventional data memory works on the basis of electrons that are moved around and stored. However, even by atomic standards, electrons are extremely small. It is very difficult to ...

Resistive memory cells or ReRAMs for short are deemed to be the new super information-storage solution of the future. At present, two basic concepts are being pursued, which, up to now, were ...

Resistance switching of random access memory has been widely explored due to its potential for replacement of flash memory in the next-generation nonvolatile memory applications. One of the problems ...

Conventional computers are based on von Neumann architecture in which data processing and storage are physically separated. Data shuttling between processing unit and memory leads extra energy ...

WASHINGTON, D.C. Sept. 20, 2013 -- Memory based on electrically-induced "resistive switching" effects have generated a great deal of interest among engineers searching for faster and smaller devices ...