Phase separation, when molecules part like oil and water, works alongside oxygen diffusion to help memristors -- electrical components that store information using electrical resistance -- retain ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known ...

Magnetization switching remains one of the central applications of spintronic devices. “Useful devices, such as magnetic memory or logic circuits, require the ability to switch individual magnetic ...

New research shows 2D carbon materials can store electrical states, reshaping how AI chips manage power and lower electricity ...

Cambridge scientists have developed a new prototype for computer memory that could make for faster chips that could hold up to 100 times more data. The system is made up of barium bridges between ...

Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...

MIT engineers have developed a magnetic transistor that could pave the way for smaller, faster, and more efficient electronics. By replacing silicon with a magnetic semiconductor, the team created a ...

A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, ...

The USB Specification requires current limiting and/or power switching for USB power management, and references resettable polymeric positive temperature coefficient (PPTC) devices and solid-state ...