(Nanowerk News) Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl’s best friend. Their groundbreaking research focuses on gallium nitride (GaN) ...

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication systems and the power electronics needed for state-of-the-art data centers.

Ampleon has launched four 700-W GaN-on-SiC RF transistors for S-band radar systems, operating between 2.7 GHz and 3.5 GHz. The CLS3H2731 and CLS3H3135 series leverage a radar-optimized GaN-on-SiC ...

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...

Today, the most common building block used in power conversion is the half bridge. It is the starting point for the journey towards a power system-on-a-chip. The EPC2100 is the first commercially ...

Why Navitas Semiconductor’s GaN solution is unique. Why GaN-based power supplies are smaller and more efficient. Gallium-nitride (GaN) transistors are able to handle large currents at high switching ...

What just happened? A team of researchers at MIT, in collaboration with Georgia Tech and the Air Force Research Laboratory, has developed a new method for integrating gallium nitride (GaN) transistors ...

CGD has already made remarkable progress, developing new intellectual property and bringing to market its new ICeGaN ™ Gallium Nitride transistor family which addresses a $50bn global power ...

A research team has fabricated a gallium nitride (GaN) transistor using diamond, which of all natural materials has the highest thermal conductivity on earth, as a substrate, and they succeeded in ...

The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance. Researchers at Osaka ...